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High-Performance Modulators

· Proprietary high-speed silicon MZM and hybrid polymer modulators achieving >70 GHz bandwidth.

· Optimized low Vπ·L (<1.5 V·cm) design with advanced traveling-wave electrodes ensures low drive voltage and high linearity.

· Supports PAM4 / NRZ / QAM modulation up to 400G / 800G / 1.6T link capacity.

· Provides both CPO (Co-Packaged Optics) and LPO (Linear Pluggable Optics) options for high-speed, low-power integration at chip level.

Ultra-Low Loss Waveguide

· Utilizes tri-layer hard-mask deep etch and LPCVD SiN processes, achieving sidewall roughness < 2 nm.

· Demonstrates < 0.1 dB/cm propagation SIN WG loss — significantly lower than the industry norm (0.4–1 dB/cm).

· Low-stress waveguide stack ensures stable performance across O/C/L bands for interferometers, filters, and modulators.

Proprietary High-Efficiency,
Low-Loss Edge Coupler

· Patented graded-index tapered coupler with 3D alignment-tolerant design, achieving < 0.5 dB coupling loss per facet.

· Compatible with SMF, PMF, and SiN waveguides, supporting broadband operation from O to L band.

· Provides ±1.5 μm alignment tolerance and is insensitive to adhesive refractive-index variations, ensuring consistent optical performance in mass packaging.

Integrated MUX/DEMUX

· On-chip MUX/DEMUX co-designed with modulator, P, and edge coupler to form a complete Tx/Rx photonic link.

· Achieves < 0.5 dB insertion loss and < 0.05 nm channel tolerance, ensuring high isolation and low crosstalk.

· At 200G/lane Rx, the integrated Demux effectively eliminates the bandwidth and crosstalk limitations of conventional PIN PD + external Demux architectures.

SUCCESS CASES
Efficient Modulator Compatible with Silicon-based CMOS Technology
Efficient Modulator Compatible with Silicon-based CMOS Technology
By leveraging the silicon photonic carrier dispersion effect and optimizing the energy and dose conditions of ion implantation, a low-loss, high-efficiency PN junction has been achieved. Additionally, through system-level optoelectronic co-design, the junction capacitance, series resistance, and inductance of the modulator are comprehensively designed. This allows the traveling-wave electrode of the modulator to simultaneously achieve impedance matching and velocity matching. The combination of the high-efficiency, low-loss PN junction design and the optimized traveling-wave electrode design u
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5DIPS Light Engine
5DIPS Light Engine
Based on silicon-on-insulator (SOI) technology compatible with CMOS processes, monolithic integration of Frequency-Modulated Continuous Wave (FMCW) modulators, large-scale Optical Phased Arrays (OPAs), and coherent balanced receivers has been achieved. This enables the emission and coherent detection of directional signals, and instantaneously measures five dimensions: three-dimensional vectors, velocity, and acceleration, providing an ultimate solution for autonomous driving. - Solid-state design: The all-solid-state design significantly enhances reliability. - Integrated transmitter and re
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Automotive-Grade LCOS AR-HUD
Automotive-Grade LCOS AR-HUD
Based on LCOS (Liquid Crystal on Silicon) technology, the projection chip meets the automotive-grade requirements for AR-HUD products, offering high resolutions of 2K to 4K and a large field of view (FOV) of 12°×4°. It also features low product dimensions and cost.
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